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XP152A12C0MR-G
■ ELECTRICAL CHARACTERISTICS
DC Characteristics
T a = 25 ℃
PARAMETER
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Drain-Source On-State Resistance *1
Forward Transfer Admittance *1
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
| Yfs |
Vf
CONDITIONS
Vds= -20V, Vgs= 0V
Vgs= ± 12V, Vds= 0V
Id= -1mA, Vds= -10V
Id= -0.4A, Vgs= -4.5V
Id= -0.4A, Vgs= -2.5V
Id= -0.4A, Vds= -10V
If= -0.7A, Vgs= 0V
MIN.
-
-
-0.5
-
-
-
-
TYP.
-
-
-
0.23
0.37
1.5
-0.8
MAX.
-10
± 10
-1.2
0.30
0.50
-
-1.1
UNITS
μ A
μ A
V
Ω
Ω
S
V
*1 Effective during pulse test.
Dynamic Characteristics
T a = 25 ℃
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds= -10V, Vgs=0V
f= 1MHz
MIN.
-
-
-
TYP.
180
120
60
MAX.
-
-
-
UNITS
pF
pF
pF
Switching Characteristics
T a = 25 ℃
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs= -5V, Id= -0.4A
Vdd= -10V
MIN.
-
-
-
-
TYP.
5
20
55
70
MAX.
-
-
-
-
UNITS
ns
ns
ns
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a ceramic PCB
MIN.
-
TYP.
250
MAX.
-
UNITS
℃ /W
2/5
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